Physics-based switching model for Cu/SiO2/W quantum memristor

Document Type

Conference Proceeding

Publication Date

8-22-2016

Abstract

Memristive devices are leading candidates for realizing next generation non-volatile memory [1] and brain-inspired neuromorphic computing systems [2]. However, most of these devices operate at high voltages (1-3 V) and require 100s of μA for programming. We recently demonstrated a Cu/SiO2/W memristor device, exhibiting half-integer quantum conductance states at room temperature and sub-300 mV switching [3]. In this paper we develop a physics based model for this device, capturing the observed experimental programming characteristics including its switching response, conductance quantization, and pulse response.

Identifier

84987735517 (Scopus)

ISBN

[9781509028276]

Publication Title

Device Research Conference Conference Digest Drc

External Full Text Location

https://doi.org/10.1109/DRC.2016.7548509

ISSN

15483770

Volume

2016-August

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