Reliability of post plasma oxidation processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge substrates

Document Type

Conference Proceeding

Publication Date

1-1-2017

Abstract

In this work, we have investigated the impact of Slot-Plane Antenna Plasma Oxidation (SPAO) on TiN/Hf1-xZrxO2/Al2O3/Ge gate stack with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%) in the dielectrics. The dielectrics were subjected to SPAO after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (VFB), interface state density (Dit), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. While the devices with up to 75% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap Dit tend to increase with decrease in EOT. With 100% Zr incorporation EOT increased significantly while reducing the mid-gap Dit. This behavior is mostly dependent on GeOx-like interfacial layer formation and defects at the interface.

Identifier

85021773107 (Scopus)

ISBN

[9781607688051]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/07702.0099ecst

e-ISSN

19385862

ISSN

19386737

First Page

99

Last Page

108

Issue

2

Volume

77

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