Document Type
Thesis
Date of Award
Fall 10-31-1996
Degree Name
Master of Science in Engineering Science- (M.S.)
Department
Committee for the Interdisciplinary Program in Materials Science and Engineering
First Advisor
Roland A. Levy
Second Advisor
Lev N. Krasnoperov
Third Advisor
Kenneth Rudolph Farmer
Abstract
Silicon dioxide thin films were synthesized on silicon and quartz wafers using Ditertiarybutylsilane(DTBS) and oxygen as precursors. Trimethylphosphite (TMP) was injected to obtain phosphosilicate glass. The films were processed at different temperatures between 700°C and 850°C at a constant pressure, and at different flow ratios of the precursors. The films deposited were uniform, amorphous and the composition of the films varied with deposition temperature and precursor flow ratios. The deposition rate increased with increasing temperature and with increasing TMP flow rate. The stresses were very low tensile in the case of undoped silicon dioxide film and tended towards being less tensile with increasing deposition temperature. The refractive index increased with increasing deposition temperature. The higher refractive index was probably because the films were rich in carbon. A less transparent film at higher temperatures also suggested presence of carbon at higher temperatures. In the case of the binary silicate glass, the stresses tended to be progressively compressive with increasing phosphorus content. The density and refractive index increased with increasing phosphorus content. Both undoped and doped oxides showed almost 99% optical transmission at a deposition temperature of 700°C. The undoped and the binary oxides showed best properties, especially optical properties, at 700°C.
Recommended Citation
Venkatesan, Vijayalakshmi, "Low pressure chemical vapor deposition of silicon dioxide and phosphosilicate glass thin films" (1996). Theses. 1128.
https://digitalcommons.njit.edu/theses/1128
